2008年度発表論文

[1] Takayuki Nakano, Tomonari Shioda, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki; “Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy”, Japanese Journal of Applied Physics, Vol. 48 (2009) 011101

[2] Koichiro Okamoto, Shigeru Inoue, Takayuki Nakano, Jitsuo Ohta, Hiroshi Fujioka; “Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers”, Journal of Crystal Growth, 311 (2009) pp1311–1315

[3] T. Nakano, T. Shioda, E. Abe, M. Sugiyama, N. Enomoto, Y. Nakano and Y. Shimogaki; “Abrupt InGaP/GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy”, Applied Physics Letters, 92 (2008) 112106-8

[4] T. Nakano, M. Sugiyama, Y. Nakano and Y. Shimogaki; “Kinetics of Subsurface Formation during Metal-Organic Vapor Phase Epitaxy Growth of InP and InGaP”, Japanese Journal of Applied Physics, 47 (2008) 1473-1478

[5] K. Okamoto, S. Inoue, T. Nakano, T.-W. Kim, M. Oshima and H. Fujioka; “Epitaxial growth of AlN on single crystal Mo substrates”, Thin Solid Films, 516 (2008) 4809–4812