国際会議

[1] Takayuki Nakano, Akira Aoyama, Yasuhiro Goto, Koichiro Okamoto, Shigeru Inoue, Hiroshi Fujioka, “Epitaxial Growth of High Quality AlN by Pulsed Sputtering Deposition”, 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, USA, September 17-22, 2007

[2] Shigeru Inoue, Koichiro Okamoto, Takayuki Nakano, Jitsuo Ohta, Hiroshi Fujioka, “Epitaxial Growth of Group III Nitrides on Rh(111) UV Mirrors”, 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, USA, September 17-22, 2007

[3] Akira Aoyama, Yasuhiro Goto, Shigeru Inoue, Takayuki Nakano, Hiroshi Fujioka, “Epitaxial Growth of GaN on Lattice-Matched ZrN Buffers Prepared by Pulsed Sputtering Deposition”, 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, USA, September 17-22, 2007

[4] Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Takayuki Nakano, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano “Characterization of indium segregation in MOVPE-grown InGaP by Schottky barrier height measurement”, The 15th International Conference on Crystal Growth (ICCG15), S03, Salt Lake City, Utah, USA, August 12 - 17, 2007

[5] S. Inoue, K. Okamoto, T. Nakano, T. W. Kim and H. Fujioka, “Characteristics of GaN Epitaxial Growth on Ag Mirrors”, International Workshop on Nitride Semiconductors 2006 (IWN2006), TuP1-50, Kyoto, Japan, October 22-27, 2006

[6] K. Okamoto, S. Hirata, S. Inoue, T. Nakano, T. Kim, J. Ohta, H. Fujioka, and M. Oshima, “Epitaxial Growth of Group III nitrides on Bcc Metal Substrates”, International Workshop on Nitride Semiconductors 2006 (IWN2006), TuP1-42, Kyoto, Japan, October 22-27, 2006

[7] O. Ichiukawa, N. Fukuhara, M. Hata, T. Nakano, M. Sugiyama, Y. Shimogaki, and Y. Nakano, “InGaP –on-GaAs heterointerface profile by FE-AES measurement and its relation to device property”, 13th International Conference on Metal-Organic Vaper Phase Epitaxy (IC-MOVPE13), We-P.99, Miyazaki, Japan, May 22-26,2006

[8] T. Nakano, E. Abe, M. Sugiyama, Y. Nakano, and Y. Shimogaki, “Precise control of GaAs/InGaP interface structure and its abruptness analyzed by S-TEM”, 13th International Conference on Metal-Organic Vaper Phase Epitaxy (IC-MOVPE13), We-B1.4, Miyazaki, Japan, May 22-26,2006

[9] M. Sugiyma, N. Waki, Y. Nobumori, H. Song, T. Nakano, T. Arakawa, Y. Nakano, and Y. Shimogaki, "Control of abnormal edge growth in selective area MOVPE of InP", 16th American Conference on Crystal Growth and Epitaxy (ACCGE16), Montana, USA, July 10-15, 2005

[10] Takayuki Nakano,Masakazu Sugiyama, Yoshiaki Nakano,and Yukihiro Shimogaki “Surface kinetics in MOVPE of InP and InGaP analyzed by flow modulation method”. 17th International Conference on Indium Phosphide and related materials (IPRM’05), WP-20, Glasgow, Scotland, UK, May 8-12,2005

[11] Noriaki Waki, Takayuki Nakano, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki "Role of surface diffusion during Selective Area MOVPE growth of compound semiconductor". the 3rd Asian Conference on Chemical Vapor Deposition (ACVD3), Taipei, Oct. 12-14, 2004

[12] Takayuki Nakano,Masakazu Sugiyama, Yoshiaki Nakano,and Yukihiro Shimogaki “The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method”. 12th International Conference on Metal-Organic Vaper Phase Epitaxy (IC-MOVPE12), Maui, Hawaii, USA, May 30-June 4, 2004

[13] Takayuki Nakano,Yoshiaki Nakano,and Yukihiro Shimogaki “Optimaization of InGaP/GaAs Interface Structure using Kinetic Ellipsometry in MOVPE”. 13th International Conference on Crystal Growth (ICCG-13), paper 03a-SB1-05, Kyoto, Japan, July 31-August 4, 2001

[14] Takayuki Nakano,Yoshiaki Nakano,and Yukihiro Shimogaki “Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE”. 10th International Conference on Metal-Organic Vaper Phase Epitaxy (IC-MOVPE10),We-P16, pp. 228-229, Sapporo, Japan, June 28-30, 2000