2007年度までの発表論文

[1] Shigeru Inoue, Kouichiro Okamoto, Takayuki Nakano, Jitsuo Ohta, and Hiroshi Fujioka; “Growth of single crystalline GaN on silver mirrors”, Applied Physics Letters, 91 (2007) 191905-7

[2] Shigeru Inoue, Kouichiro Okamoto, Takayuki Nakano, Jituo Ohta, and Hiroshi Fujioka; “Epitaxial growth of AlN films on Rh ultraviolet mirrors”, Applied Physics Letters, 91 (2007) 131910-2

[3] Momoko Deura, Masakazu Sugiyama, Takayuki Nakano, Yoshiaki Nakano, and Yukihiro Shimogaki; “Kinetic Analysis on the Surface Adsorption Layer in GaAs (001) Metalorganic Vapor Phase Epitaxy by in situ Reflectance Anisotropy Spectroscopy”, Japanese Journal of Applied Physics, 46(10A) (2007) 6519–6524

[4] O. Ichikawa, N. Fukuhara, M. Hata, T. Nakano, M. Sugiyama, Y. Shimogaki, and Y. Nakano; “High resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties”, Journal of Crystal Growth, 298 (2007) 85-89

[5] 中野貴之,杉山正和,阿部英司,中野義昭,霜垣幸浩.”Zコントラスト法による化合物半導体へテロ界面急峻性評価”, まてりあ,第45巻,第12号(2006),853

[6] Shigeru Inoue, Kouichiro Okamoto, Takayuki Nakano, Jituo Ohta, and Hiroshi Fujioka; “Characteristics of single crystalline AlN films grown on Ru(0001) substrates”, Journal of Crystal Growth, 297 (2006) 317-321

[7] Takayuki Nakano, Yoshiaki Nakano, and Yukihiro Shimogaki; “Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE”, Journal of Crystal Growth, 296 (2006) 179-185

[8] M. Sugiyma, N. Waki, Y. Nobumori, H. Song, T. Nakano, T. Arakawa, Y. Nakano, and Y. Shimogaki; “Control of abnormal edge growth in selective area MOVPE of InP”, Journal of Crystal Growth, 287 (2006) 668-672

[9] N. Waki, T. Nakano, M. Sugiyma, Y. Nakano, and Y. Shimogaki; “Role of surface diffusion during Selective Area MOVPE growth of InP”, Thin Solid Films, 498 (2006) 163-166

[10] Takayuki Nakano,Masakazu Sugiyama,Yoshiaki Nakano,and Yukihiro Shimogaki; “The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method”, Journal of Crystal Growth, 272 (2004) 15-23

[11] Takayuki Nakano,Yoshiaki Nakano,and Yukihiro Shimogaki; “Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE”, Journal of Crystal Growth, 221 (2000) 136-141